| MT53E256M32D1KS-046 WT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
| MT53E768M64D4HJ-046 AAT:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 1.1V | -40C to +105C | 556-ball TFBGA | Mass Production |
| MT53E768M32D4DE-046 AIT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53D1024M32D4DT-053 AAT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 1866MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
| MT53E2G64D8TN-046 AUT:C | Micron Technology | LPDDR4 | 128Gb | 2G x64 | 2133MHz | 0.6V | -40C to +125C | 556-ball LFBGA | Mass Production |
| MT40A2G8Z42BWC1 | Micron Technology | LPDDR4 | 16Gb | 2G x8 | 1.2V | 0C to +95C | - | Mass Production |
| MT53E128M32D2FW-046 AIT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E512M16D1FW-046 AAT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53D1024M32D4DT-046 AAT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
| MT53D512M64D4NW-046 WT:F | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -30C to +85C | 432-ball VFBGA | Mass Production |
| MT53E256M32D2DS-046 AIT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT53E256M16D1DS-046 WT:B | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 2133MHz | 0.6V | -30C to +85C | 200-ball WFBGA | Mass Production |
