| K4UCE3Q4AB-MGCL | Samsung | LPDDR4X | 64 Gb | x32 | 4266 Mbps | 1.8 / 1.1 / 0.6 V | -25 ~ 85 ℃ | 200 FBGA | Mass Production |
| MT53E1G64D4SP-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 1.1V | -25C to +85C | 556-ball VFBGA | Mass Production |
| MT53E512M32D1ZW-046BAAT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M64D2NZ-46 WT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -25C to +85C | 376-ball WFBGA | Mass Production |
| MT53E1536M32D4DE-046 AAT:B | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53D1024M64D8PM-053 WT:D | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 1866MHz | 0.6V | -25C to +85C | 376-ball VFBGA | Mass Production |
| MT53E1536M32D4DE-046 AAT:C | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M32D1ZW-046 AUT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53E256M16D1FW-046 WT:B | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E4G32D8GS-046 AIT:C | Micron Technology | LPDDR4 | 128Gb | 4G x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball LFBGA | Mass Production |
| MT53E768M64D4HJ-046 AIT:B | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 0.6V | -40C to +95C | 556-ball TFBGA | Mass Production |
| MT53E256M32D2DS-046 AAT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball WFBGA | Mass Production |
