| MT53E768M64D4HJ-046 AIT:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 0.6V | -40C to +95C | 556-ball TFBGA | Mass Production |
| MT53E768M32D4DE-046 AAT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 1.1V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53D1024M32D4DT-053 AIT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 1866MHz | 0.6V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53E128M32D2FW-046 AAT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2NP-053 RS WT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 1866MHz | 0.6V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E768M16D1ZW-046 WT:C | Micron Technology | LPDDR4 | 12Gb | 768M x16 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2NP-053 RS WT:C | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 1866MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53D768M32D2NP-046 WT:A | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E512M16D1FW-046 AIT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53D1024M32D4DT-046 AIT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53D512M16D1DS-046 WT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E1G32D2FW-046 AUT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Mass Production |
