| MT53D512M16D1DS-046 AAT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -40C to +105C | 200-ball WFBGA | Mass Production |
| MT53E768M32D4DT-053 AIT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 1866MHz | 0.6V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53D512M32D2DS-053 AAT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 1866MHz | 0.6V | -40C to +105C | 200-ball WFBGA | Mass Production |
| MT53E256M32D1KS-046 IT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53E768M32D2ZW-046 AUT:C | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53E256M16D1FW-046 AIT:B | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E2G32D4DT-046 AAT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
| MT53E2G32D4DE-046 AIT:C | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E512M32D1ZW-046 WT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E2G32D4DE-046 AIT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E768M32D4DT-046 AIT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53E2G32D4DT-046 WT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -30C to +85C | 200-ball VFBGA | Mass Production |
