| MT53E1G64D4NZ-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 1.1V | -25C to +85C | 376-ball WFBGA | Mass Production |
| MT53E1G64D4HJ-046 AIT:A | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 0.6V | -40C to +95C | 556-ball TFBGA | Mass Production |
| MT53E128M32D2DS-053 AIT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 1866MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT53E256M32D1KS-046 AIT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53E4G32D8GS-046 WT:C | Micron Technology | LPDDR4 | 128Gb | 4G x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball LFBGA | Mass Production |
| MT53D512M32D2DS-046 AAT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball WFBGA | Mass Production |
| MT53E2G32D4NQ-046 WT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
| MT53E2G32D4NQ-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
| MT53E512M32D2FW-046 AIT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E128M32D2DS-046 WT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E512M64D2HJ-046 AAT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 1.1V | -40C to +105C | 556-ball TFBGA | Mass Production |
| MT53E256M32D2DS-053 AIT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 1866MHz | 1.1V | -40C to +95C | 200-ball WFBGA | Mass Production |
