| MT53E1G32D2FW-046 AIT:A | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 AIT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E4G32D8CY-046 WT:C | Micron Technology | LPDDR4 | 128Gb | 4G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E128M32D2DS-046 AAT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball WFBGA | Mass Production |
| MT53E512M32D1ZW-046 AAT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M16D1Z11MWC1 | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 0.6V | 0C to +85C | - | Mass Production |
| MT53E512M64D2RR-046 WT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -25C to +85C | 556-ball WFBGA | Mass Production |
| MT53E768M32D4DT-046 WT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
| MT53E1G16D1FW-046 AAT:A | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 2133MHz | 1.1V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M64D2HJ-046 AIT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 1.1V | -40C to +95C | 556-ball TFBGA | Mass Production |
| MT53E1536M32DDNQ-046 WT:A | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
| MT53E1536M64D8HJ-046 WT:B | Micron Technology | LPDDR4 | 96Gb | 1.5G x64 | 2133MHz | 1.1V | -25C to +85C | 556-ball TFBGA | Mass Production |
