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DRAM

集成电路 DRAM 嵌入式存储 多芯片封装 固态硬盘
DDR HBM GDDR LPDDR 模组
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K3LK2K20BM-BGCNSamsungLPDDR548 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL
K3LKCKC0BM-MGCPSamsungLPDDR564 Gbx326400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃315 FBGAMass Production
K3LK7K70BM-BGCPSamsungLPDDR564 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3LK6K60BM-BGCPSamsungLPDDR5128 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3LKDKD0CM-BGCPSamsungLPDDR5144 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3LKBKB0BM-MGCPSamsungLPDDR532 Gbx326400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃315 FBGAMass Production
K3LK7K70BM-JGCPSamsungLPDDR564 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃441 FBGAMass Production
K3LK6K60BM-JUCPSamsungLPDDR5128 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-40 ~ 125 ℃441 FBGAMass Production
K3LK6K60BM-JGCPSamsungLPDDR5128 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃441 FBGAMass Production
K3LK6K60BM-JFCPSamsungLPDDR5128 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-40 ~ 95 ℃441 FBGASample
K3LK4K40CM-JUCPSamsungLPDDR596 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-40 ~ 125 ℃441 FBGAMass Production
K3LK4K40CM-JHCPSamsungLPDDR596 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-40 ~ 105 ℃441 FBGAMass Production