| M321R4GA3PB2-CCP | Samsung | DDR5 | RDIMM | 32 GB | 2R x 8 | 6400 Mbps | 1.1 V | 288 | Sample |
| M321R4GA0PB2-CCP | Samsung | DDR5 | RDIMM | 32 GB | 1R x 4 | 6400 Mbps | 1.1 V | 288 | Sample |
| M321R3GA3PB2-CCP | Samsung | DDR5 | RDIMM | 24 GB | 1R x 8 | 6400 Mbps | 1.1 V | 288 | Sample |
| M321R3GA3PB0-CWM | Samsung | DDR5 | RDIMM | 24 GB | 1R x 8 | 5600 Mbps | 1.1 V | 288 | Mass Production |
| M321R2GA3PB2-CCP | Samsung | DDR5 | RDIMM | 16 GB | 1R x 8 | 6400 Mbps | 1.1 V | 288 | Sample |
| MT53E1G64D4SP-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 1.1V | -25C to +85C | 556-ball VFBGA | Mass Production |
| MT53E512M32D1ZW-046BAAT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M64D2NZ-46 WT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -25C to +85C | 376-ball WFBGA | Mass Production |
| MT53E1536M32D4DE-046 AAT:B | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53D1024M64D8PM-053 WT:D | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 1866MHz | 0.6V | -25C to +85C | 376-ball VFBGA | Mass Production |
| MT53E1536M32D4DE-046 AAT:C | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E512M32D1ZW-046 AUT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +125C | 200-ball TFBGA | Mass Production |
