| MT53E512M16D1FW-046 AIT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53D1024M32D4DT-046 AIT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53D512M16D1DS-046 WT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E1G32D2FW-046 AUT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 AUT:A | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 1.1V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 AUT:C | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 1.1V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53E2G64D8TN-046 WT:C | Micron Technology | LPDDR4 | 128Gb | 2G x64 | 2133MHz | 1.1V | -30C to +85C | 556-ball LFBGA | Mass Production |
| MT53E2G64D8TN-046 WT:A | Micron Technology | LPDDR4 | 128Gb | 2G x64 | 2133MHz | 0.6V | -25C to +85C | 556-ball LFBGA | Mass Production |
| MT53D1024M32D4DT-046 AUT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball VFBGA | Mass Production |
| MT53E512M32D2NP-053 RS WT:K | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 1866MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E1G16D1FW-046 WT:A | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E256M32D2FW-046 AIT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
