| MT53E2G32D4DT-046 AIT:A | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball VFBGA | Mass Production |
| MT53E512M64D2HJ-046 AUT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 1.1V | -40C to +125C | 556-ball TFBGA | Mass Production |
| MT53D512M16D1DS-046 AIT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT53E768M32D4DT-046 AAT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
| MT53E512M64D2HJ-046 WT:B | Micron Technology | LPDDR4 | 32Gb | 512M x64 | 2133MHz | 0.6V | -30C to +85C | 556-ball TFBGA | Mass Production |
| MT53E1536M64D8HJ-046 AUT:C | Micron Technology | LPDDR4 | 96Gb | 1.5G x64 | 2133MHz | 0.6V | -40C to +125C | 556-ball TFBGA | Mass Production |
| MT53D512M32D2DS-046 AIT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT40A4G4Z42BWC1 | Micron Technology | LPDDR4 | 16Gb | 4G x4 | 1.2V | 0C to +95C | - | Mass Production |
| MT53E768M64D4HJ-046 AIT MS:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 1.1V | -40C to +95C | 556-ball TFBGA | Mechanical Sample |
| MT40A1G16Z42BWC1 | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 1.2V | 0C to +95C | - | Mass Production |
| MT53D512M32D2DS-053 AIT:D | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 1866MHz | 0.6V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT53E768M32D4DT-053 AAT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 1866MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |
