| MT53E384M32D2FW-046 AIT:E | Micron Technology | LPDDR4 | 12Gb | 384M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E128M32D2DS-053 AAT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 1866MHz | 1.1V | -40C to +105C | 200-ball WFBGA | Mass Production |
| MT53E512M32D1ZW-046BAUT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Mass Production |
| MT53B256M16D1Z00MWC1S | Micron Technology | LPDDR4 | 4Gb | 256M x16 | 1.1V | -30C to +85C | - | Mass Production |
| MT53E256M32D2FW-046 WT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 0.6V | -30C to +85C | 200-ball TFBGA | Mass Production |
| MT53E768M16D1ZW-046 AAT:C | Micron Technology | LPDDR4 | 12Gb | 768M x16 | 2133MHz | 1.1V | -40C to +105C | 200-ball TFBGA | Mass Production |
| MT53E768M32D2ZW-046 WT:C | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53D768M16D1Z3BMWC1 | Micron Technology | LPDDR4 | 12Gb | 768M x16 | 1.1V | -25C to +85C | - | Mass Production |
| MT53E512M32D1NP-046 WT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E512M32D1NP-053 RS WT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 1866MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E512M32D1ZW-046BIT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E256M32D1KS-046 AAT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +105C | 200-ball VFBGA | Mass Production |
