DRAM | 亿诚科技国际有限公司

DDR HBM GDDR LPDDR 模组

Part Number	Manufacturer	Technology	Density	Organization	Speed	Voltage	Temperature	Package	Product Status
K4AAG165WB-MCTD	Samsung	DDR4	16 Gb	1G x 16	2666 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4AAG165WB-MCRC	Samsung	DDR4	16 Gb	1G x 16	2400 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4AAG165WB-MCPB	Samsung	DDR4	16 Gb	1G x 16	2133 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4AAG165WA-BCTD	Samsung	DDR4	16 Gb	1G x 16	2666 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4AAG085WB-MCRC	Samsung	DDR4	16 Gb	2G x 8	2400 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4AAG085WB-MCPB	Samsung	DDR4	16 Gb	2G x 8	2133 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4ABG165WA-MCTD	Samsung	DDR4	32 Gb	2G x 16	2666 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4ABG085WA-MCTD	Samsung	DDR4	32 Gb	4G x 8	2666 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4AAG085WA-BCTD	Samsung	DDR4	16 Gb	2G x 8	2666 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4A8G165WC-BIWE	Samsung	DDR4	8 Gb	512M x 16	3200 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A8G165WC-BITD	Samsung	DDR4	8 Gb	512M x 16	2666 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A8G165WC-BCWE	Samsung	DDR4	8 Gb	512M x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Sample