DRAM | 亿诚科技国际有限公司

DDR HBM GDDR LPDDR 模组

Part Number	Manufacturer	Technology	Density	Organization	Speed	Voltage	Temperature	Package	Product Status
K4A8G165WB-BCWE	Samsung	DDR4	8 Gb	512M x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A8G085WC-BIWE	Samsung	DDR4	8 Gb	1G x 8	3200 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A8G085WC-BITD	Samsung	DDR4	8 Gb	1G x 8	2666 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A8G085WC-BCWE	Samsung	DDR4	8 Gb	1G x 8	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Sample
K4A4G165WF-BITD	Samsung	DDR4	4 Gb	256M x 16	2666 Mbps	1.2 V	-40 ~ 95 ℃	96 FBGA	Mass Production
K4A4G165WF-BCTD	Samsung	DDR4	4 Gb	256M x 16	2666 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G165WE-BCWE	Samsung	DDR4	4 Gb	256M x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4A4G085WF-BITD	Samsung	DDR4	4 Gb	512M x 8	2666 Mbps	1.2 V	-40 ~ 95 ℃	78 FBGA	Mass Production
K4A4G085WF-BCTD	Samsung	DDR4	4 Gb	512M x 8	2666 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	Mass Production
K4ABG165WA-MCWE	Samsung	DDR4	32 Gb	2G x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production
K4ABG085WA-MCWE	Samsung	DDR4	32 Gb	4G x 8	3200 Mbps	1.2 V	0 ~ 85 ℃	78 FBGA	EOL
K4AAG165WA-BCWE	Samsung	DDR4	16 Gb	1G x 16	3200 Mbps	1.2 V	0 ~ 85 ℃	96 FBGA	Mass Production