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LPDDR

集成电路 DRAM 嵌入式存储 多芯片封装 固态硬盘
DDR HBM GDDR LPDDR 模组
Part NumberManufacturerTechnologyDensityOrganizationSpeedVoltageTemperaturePackageProduct Status
K4U6E3S4AB-MGCLSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-25 ~ 85 ℃200 FBGAMass Production
K4UJE3Q4AA-TFCLSamsungLPDDR4X48 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 ℃200 FBGAMass Production
K4UJE3D4AA-KUCLSamsungLPDDR4X48 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 125 ℃200 FBGAMass Production
K4U6E3S4AB-KFCLSamsungLPDDR4X16 Gbx324266 Mbps1.8 / 1.1 / 0.6 V-40 ~ 95 ℃200 FBGAMass Production
K3LK4K40BM-CGCNSamsungLPDDR596 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃436 FBGAEOL
K3LK4K40BM-BGCNSamsungLPDDR596 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL
K3LK3K30EM-CGCNSamsungLPDDR564 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃436 FBGAEOL
K3LK3K30EM-BGCNSamsungLPDDR564 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL
K3LK2K20BM-BGCNSamsungLPDDR548 Gbx645500 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAEOL
K3LKCKC0BM-MGCPSamsungLPDDR564 Gbx326400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃315 FBGAMass Production
K3LK7K70BM-BGCPSamsungLPDDR564 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production
K3LK6K60BM-BGCPSamsungLPDDR5128 Gbx646400 Mbps1.8 / 1.05 / 0.9 / 0.5 V-25 ~ 85 ℃496 FBGAMass Production