MT53D1G64D4NW-046 WT:A | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 0.6V | -25C to +85C | 432-ball VFBGA | Mass Production |
MT53E1536M32D4DE-046 AIT:C | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
MT53E768M64D4HJ-046 WT:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 1.1V | -25C to +85C | 556-ball TFBGA | Mass Production |
MT53E1G64D4HJ-046 AUT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 0.6V | -40C to +125C | 556-ball TFBGA | Mass Production |
MT53E768M64D4HJ-046 WT:B | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 0.6V | -25C to +85C | 556-ball TFBGA | Mass Production |
MT53E512M32D1ZW-046 IT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
MT53E1G16D1ZW-046 AIT:C | Micron Technology | LPDDR4 | 16Gb | 1G x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
MT53E768M64D4HJ-046 AAT:B | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 0.6V | -40C to +105C | 556-ball TFBGA | Mass Production |
MT53E256M32D1KS-046 WT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball VFBGA | Mass Production |
MT53E768M64D4HJ-046 AAT:C | Micron Technology | LPDDR4 | 48Gb | 768M x64 | 2133MHz | 1.1V | -40C to +105C | 556-ball TFBGA | Mass Production |
MT53E768M32D4DE-046 AIT:E | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
MT53D1024M32D4DT-053 AAT:D | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 1866MHz | 0.6V | -40C to +105C | 200-ball VFBGA | Mass Production |