| MT53E2G32D4DE-046 AUT:C | Micron Technology | LPDDR4 | 64Gb | 2G x32 | 2133MHz | 0.6V | -40C to +125C | 200-ball TFBGA | Engineering Sample |
| MT53E1G64D4HJ-046 WT:A | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 1.1V | -25C to +85C | 556-ball TFBGA | Mass Production |
| MT53E768M16D1ZW-046 AIT:C | Micron Technology | LPDDR4 | 12Gb | 768M x16 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E256M32D1KS-046 AUT:L | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +125C | 200-ball VFBGA | Mass Production |
| MT53E1G32D2FW-046 WT:A | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 WT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 WT:C | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E512M32D1ZW-046BAIT:B | Micron Technology | LPDDR4 | 16Gb | 512M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E512M16D1FW-046 WT:D | Micron Technology | LPDDR4 | 8Gb | 512M x16 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E1536M32D4DE-046 AIT:B | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E768M16D1ZW-046 IT:C | Micron Technology | LPDDR4 | 12Gb | 768M x16 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E768M32D2ZW-046 AAT:C | Micron Technology | LPDDR4 | 24Gb | 768M x32 | 2133MHz | 0.6V | -40C to +105C | 200-ball TFBGA | Mass Production |
