| MT53E128M32D2DS-046 AIT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball WFBGA | Mass Production |
| MT53E1G32D2FW-046 IT:C | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E256M32D2FW-046 IT:B | Micron Technology | LPDDR4 | 8Gb | 256M x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E1G32D2FW-046 IT:B | Micron Technology | LPDDR4 | 32Gb | 1G x32 | 2133MHz | 1.1V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E1G64D4NW-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 0.6V | -25C to +85C | 432-ball VFBGA | Mass Production |
| MT53E1536M32D4DE-046 WT:C | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 1.1V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E384M32D2DS-053 WT:E | Micron Technology | LPDDR4 | 12Gb | 384M x32 | 1866MHz | 1.1V | -25C to +85C | 200-ball WFBGA | Mass Production |
| MT53E1536M32D4DE-046 WT:B | Micron Technology | LPDDR4 | 48Gb | 1.5G x32 | 2133MHz | 0.6V | -25C to +85C | 200-ball TFBGA | Mass Production |
| MT53E128M32D2FW-046 IT:A | Micron Technology | LPDDR4 | 4Gb | 128M x32 | 2133MHz | 0.6V | -40C to +95C | 200-ball TFBGA | Mass Production |
| MT53E1536M64D8HJ-046 AAT:B | Micron Technology | LPDDR4 | 96Gb | 1.5G x64 | 2133MHz | 0.6V | -40C to +105C | 556-ball TFBGA | Mass Production |
| MT53E1536M64D8HJ-046 AAT:C | Micron Technology | LPDDR4 | 96Gb | 1.5G x64 | 2133MHz | 0.6V | -40C to +105C | 556-ball TFBGA | Mass Production |
| MT53E1G64D4HJ-046 WT:C | Micron Technology | LPDDR4 | 64Gb | 1G x64 | 2133MHz | 1.1V | -30C to +85C | 556-ball TFBGA | Mass Production |
